1994 data sheet the information in this document is subject to change without notice. mos field effect power transistors 2sK2723 description this product is n-channel mos field effect transistor designed for high current switching spplications. features low on-resistance r ds (on) 1 = 40m w max. (v gs = 10 v, i d = 13 a) r ds (on) 2 = 60m w max. (v gs = 4 v, i d = 13 a) low c iss c iss = 830 pf typ. built-in g-s protection diode isolated to-220 package absolute maximum ratings (t a = 25 c) drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current (dc) i d (dc) 25 a drain current (pulse)* i d (pulse) 100 a total power dissipation (t a = 25 c) p t 2.0 w total power dissipation (t c = 25 c) p t 25 w channel temperature t ch 150 c storage temperature t stg - 55 to +150 c *pw 10 m s, duty cycle 1% the diode connected between the gate and source of the transistor serves as a protector against esd. when this deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage may be applied to this device. drain source body diode gate gate protection diode 10.0 0.3 package dimensions (in millimeter) mp-45f (isolated to-220) 4.5 0.2 2.7 0.2 2.5 0.1 1.3 0.2 4 0.2 13.5min. 12.0 0.2 15.0 0.3 3 0.1 0.7 0.1 1.5 0.2 2.54 1.gate 2.drain 3.source 2.54 123 0.65 0.1 3.2 0.2 switching n-channel power mos fet industrial use document no. d10623ej2v0ds00 (2nd edition) date published april 1996 p printed in japan
2 2sK2723 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain to source r ds (on) 1 v gs = 10 v, i d = 13 a 28 40 m w on-state resistance r ds (on) 2 v gs = 4 v, i d = 13 a 45 60 m w gate to source cutoff voltage v gs (off) v ds = 10 v, i d = 1 ma 1.0 1.6 2.0 v forward transfer admittance y fs v ds = 10 v, i d = 13 a 8.0 18 s drain leakage current i dss v ds = 60 v, v gs = 0 10 m a gate to source leakage current i gss v gs = 20 v, v ds = 0 10 m a input capacitance c iss v ds = 10 v 830 pf output capacitance c oss v gs = 0 430 pf reverse transfer capacitance c rss f = 1 mhz 185 pf turn-on delay time t d (on) i d = 13 a 21 ns rise time t r v gs (on) = 10 v 185 ns turn-off delay time t d (off) v dd = 30 v 100 ns fall time t f r g = 10 w 110 ns total gate charge q g i d = 25 a 35 nc gate to source charge q gs v dd = 48 v 2.8 nc gate to drain charge q gd v gs = 10 v 15 nc body diode forward voltage v f (s-d) i f = 25 a, v gs = 0 1.0 v reverse recovery time t r r i f = 25 a, v gs = 0 60 ns reverse recovery charge q r r di/dt = 100 a/ m s 125 nc t = 1 s duty cycle 1 % v gs 0 r g v dd r l r g = 10 w v gs wave form v gs (on) i d t d (on) t on t off t r t d (on) t r 0 10 % 0 10 % 10 % 90 % 90 % 90 % i d wave form pg. d.u.t v dd r l 50 w pg. d.u.t t m i g = 2 ma test circuit 1 switching time test circuit 2 gate charge v gs i d
3 2sK2723 forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a forward transfer characteristics v gs- gate to source voltage - v i d - drain current - a 1 derating factor of forward bias safe operating area t c - case temperature - c dt - percentage of rated power - % total power dissipation vs. case temperature t c - case temperature - c p t - total power dissipation - w 0 20 0 20 40 60 80 100 120 140 160 20 40 60 80 100 40 60 80 100 120 140 160 35 30 25 20 15 10 5 0.1 0.1 1 10 100 1 10 100 t c = 25 c single pulse 0 4 6 8 20 10 100 1000 pulsed 100 2 0 pulsed 56 8 v gs =20v v gs =4v v gs =10v t ch =-25 c 25 c 75 c 125 c 1234 7 i d(pulse) i d(dc) dc 10ms r ds(on) lmited 1ms pw=100 s m 80 60 40 v ds =10v
4 2sK2723 transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - c/w forward transfer admittance vs. drain current i d - drain current - a ? y fs ? - forward transfer admittance - s drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m w 0 10 drain to source on-state resistance vs. drain current gate to source cutoff voltage vs. channel temperature t ch - channel temperature - c v gs(off) - gate to source cutoff voltage - v i d - drain current - a r ds(on) - drain to source on-state resistance - m w 20 1 10 0.001 0.01 0.1 1 100 1 000 1m 10m 100m 1 10 100 1 000 10 mm 100 v ds =10v pulsed 1 10 10 100 1000 100 1 000 20 20 30 pulsed 40 10 100 pulsed 0 1.0 v ds = 10 v i d = 1 ma - 50 0 50 100 150 0 1 single pulse 40 2.0 60 60 v gs =4v v gs =10v t ch =-25 c 25 c 75 c 125 c r th(ch-c) =5.0 c/w r th(ch-a) =62.5 c/w id=13a 80 1.5 0.5
5 2sK2723 drain to source on-state resistance vs. channel temperature t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m w source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1 0.1 0 - 50 0 50 100 150 i d = 13a 0.1 0 1 10 100 0.5 pulsed 10 0.1 100 1 000 10 000 1 10 100 v gs = 0 f = 1 mhz 10 100 1 000 1 10 100 v gs - gate to source voltage - v reverse recovery time vs. diode current i f - dionde current - a t rr - reverse recovery time - ns di/dt =100a/ s v gs = 0 1 0.1 10 100 1 10 100 1.0 1.5 v dd =30v v gs =10v r g =10 w dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 102030 20 40 60 80 2 4 6 8 10 12 14 16 0 20 40 60 80 v gs =4v v gs =10v c iss c oss c rss v dd =12v 30v 48v v gs t d(off) t f t d(on) v ds t r v gs =0 40 v gs =10v 1 000 i d = 25a m
6 2sK2723 reference document name document no. nec semiconductor device reliability/quality control system. tei-1202 quality grade on nec semiconductor devices. iei-1209 semiconductor device mounting technology manual. c10535e semiconductor device package manual. c10943x guide to quality assurance for semiconductor devices. mei-1202 semiconductor selection guide. x10679e power mos fet features and application switching power supply. tea-1034 application circuits using power mos fet. tea-1035 safe operating area of power mos fet. tea-1037
7 2sK2723 [memo]
2sK2723 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: standard, special, and specific. the specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard : computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special : transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific : aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in standard unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11
|
